[Patent] Korean Patent (Application No. 2023-0196020 / Patent No. 10-2862456)

<Korean Patent>

• Title: “N-type Dopant Doping Method and N-type Dopant-Doped Substrate Manufactured using the Same, Method of Manufacturing a Transistor using the Same, and Transistor Including the Same”
• Inventors: Hyuk-Jun Kwon and Seunghun Baik
• Application No. 2023-0196020 / Patent No. 10-2862456
• Date: September 17, 2025