3rd January 2024
<Korean Patent Pending>
- Title: “N-type Dopant Doping Method and N-type Dopant-Doped Substrate Manufactured using the Same, Method of Manufacturing a Transistor using the Same, and Transistor Including the Same”
- Inventors: Hyuk-Jun Kwon and Seung Hun Baik
- Application No. 2023-0196020
- Date: December 29, 2023