[Patent] Korean Patent Pending (Application No. 2024-0139319)

<Korean Patent Pending>

• Title: “Method for Manufacturing a Ferroelectric Field-Effect Transistor using Laser Annealing of Dielectric and Channel Thin Films for Activation of a Monolithic 3D Stacked Structure-Based Filed-Effect Transistor”
• Inventors: Hyuk-Jun Kwon, Jae Eun Jang, Dongsu Kim, and Heejae Jeong
• Application No. 2024-0139319
• Date: October 14, 2024