1st May 2023
<Selected as Intelligent Semiconductor Leading Technology Development Project – Device>
- Project Name: “Development of low-temperature process-based Si/Ge channel fabrication technology for upper application device and implementation of circuit/architecture for next-generation large-area 3-dimensional monolithic integration”
- Total Research Period: 2023.05.01 ~ 2025.12.31
- Funding Source: Ministry of Science and ICT – National Research Foundation of Korea