“High n-type Doping Levels in Ge with Flash Lamp Annealing and Co-doping of P/Sb Formed by Plasma-Assisted Atomic Layer Deposition,”

Seunghun Baik, Hyuk-Jun Kwon, Hyeokjin Kwon, Chuck Paeng, He Zhang, Bodo Kalkofen, Jae Eun Jang, and YS Kim, “High n-type Doping Levels in Ge with Flash Lamp Annealing and Co-doping of P/Sb Formed by Plasma-Assisted Atomic Layer Deposition,” The 17^th International Nanotech Symposium, Nano Korea, July 3-5, KINTEX, Korea, 2019